Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors

Eiichi Sano, Taiichi Otsuji

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.

Original languageEnglish
Article number061601
JournalApplied Physics Express
Volume2
Issue number6
DOIs
Publication statusPublished - 2009 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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