Abstract
Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.
Original language | English |
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Article number | 061601 |
Journal | Applied Physics Express |
Volume | 2 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2009 Jun 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)