Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors

Eiichi Sano; Taiichi Otsuji

doi:10.1143/APEX.2.061601

Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors

Eiichi Sano, Taiichi Otsuji

Broadband Engineering Division

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.

Original language	English
Article number	061601
Journal	Applied Physics Express
Volume	2
Issue number	6
DOIs	https://doi.org/10.1143/APEX.2.061601
Publication status	Published - 2009 Jun 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Sano, E., & Otsuji, T. (2009). Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors. Applied Physics Express, 2(6), [061601]. https://doi.org/10.1143/APEX.2.061601

@article{7bf8208a06234dbf80f7fd5297bf35d4,

title = "Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors",

abstract = "Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.",

author = "Eiichi Sano and Taiichi Otsuji",

year = "2009",

month = jun,

day = "1",

doi = "10.1143/APEX.2.061601",

language = "English",

volume = "2",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Source and drain structures for suppressing ambipolar characteristics of graphene field-effect transistors

AU - Sano, Eiichi

AU - Otsuji, Taiichi

PY - 2009/6/1

Y1 - 2009/6/1

N2 - Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.

AB - Metal-graphene contact in graphene field-effect transistors (GFETs) causes ambipolar characteristics unsuitable for complementary logic circuits. We devised source and drain structures for suppressing these ambipolar characteristics in GFETs. The calculation results demonstrate the effectiveness of the devised structures. Similar structures could be applied to FETs with channels made by narrow-gap materials.

UR - http://www.scopus.com/inward/record.url?scp=67949095952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67949095952&partnerID=8YFLogxK

U2 - 10.1143/APEX.2.061601

DO - 10.1143/APEX.2.061601

M3 - Article

AN - SCOPUS:67949095952

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

M1 - 061601

ER -