TY - JOUR
T1 - Solvothermal growth of ZnO
AU - Ehrentraut, Dirk
AU - Sato, Hideto
AU - Kagamitani, Yuji
AU - Sato, Hiroki
AU - Yoshikawa, Akira
AU - Fukuda, Tsuguo
N1 - Funding Information:
We gratefully acknowledge funding by following organizations: The Japanese Industrial Technology Research Grant Program in 03A26014a from New Energy and Industrial Development Organization (NEDO); The Special Coordination Fund by the Ministry of Education, Culture, Sports, Science; The technology program “Development of Growth Method of Semiconductor Crystals for Next Generation Solid-State Lighting”.
PY - 2006/12
Y1 - 2006/12
N2 - The growth of ZnO single crystals and crystalline films by solvothermal techniques is reviewed. Largest ZnO crystals of 3 inch in diameter are grown by a high-pressure medium-temperature hydrothermal process employing alkaline-metal mineralizer for solubility enhancement. Structural, thermal, optical and electrical properties, impurities and annealing effects as well as machining are discussed. Poly- and single-crystalline ZnO films are fabricated from aqueous and non-aqueous solutions on a variety of substrates like glass, (100) silicon, α-Al2O3, Mg2AlO4, ScAlMgO4, ZnO and even some plastics at temperatures as low as 50 °C and ambient air conditions. Film thickness from a few nanometers up to some tens of micrometers is achieved. Lateral epitaxial overgrowth of thick ZnO films on Mg2AlO4 from aqueous solution at 90 °C was recently developed. The best crystallinity with a full-width half-maximum from the (0002) reflection of 26 arcsec has been obtained by liquid phase epitaxy employing alkaline-metal chlorides as solvent. Doping behavior (Cu, Ga, In, Ge) and the formation of solid solutions with MgO and CdO are reported. Photoluminescence and radioluminescence are discussed.
AB - The growth of ZnO single crystals and crystalline films by solvothermal techniques is reviewed. Largest ZnO crystals of 3 inch in diameter are grown by a high-pressure medium-temperature hydrothermal process employing alkaline-metal mineralizer for solubility enhancement. Structural, thermal, optical and electrical properties, impurities and annealing effects as well as machining are discussed. Poly- and single-crystalline ZnO films are fabricated from aqueous and non-aqueous solutions on a variety of substrates like glass, (100) silicon, α-Al2O3, Mg2AlO4, ScAlMgO4, ZnO and even some plastics at temperatures as low as 50 °C and ambient air conditions. Film thickness from a few nanometers up to some tens of micrometers is achieved. Lateral epitaxial overgrowth of thick ZnO films on Mg2AlO4 from aqueous solution at 90 °C was recently developed. The best crystallinity with a full-width half-maximum from the (0002) reflection of 26 arcsec has been obtained by liquid phase epitaxy employing alkaline-metal chlorides as solvent. Doping behavior (Cu, Ga, In, Ge) and the formation of solid solutions with MgO and CdO are reported. Photoluminescence and radioluminescence are discussed.
KW - A1. Solvents
KW - A1. Substrates
KW - A2. Hydrothermal crystal growth
KW - A3. Liquid phase epitaxy
KW - B1. Zinc compounds
KW - B2. Semiconducting II-VI materials
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U2 - 10.1016/j.pcrysgrow.2006.09.002
DO - 10.1016/j.pcrysgrow.2006.09.002
M3 - Article
AN - SCOPUS:33845966042
VL - 52
SP - 280
EP - 335
JO - Progress in Crystal Growth and Characterization of Materials
JF - Progress in Crystal Growth and Characterization of Materials
SN - 0960-8974
IS - 4
ER -