Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

Tomohiro Fukao; Shuichi Nakamura; Hiromichi Kataura; Masashi Shiraishi

doi:10.1143/JJAP.45.6524

Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

Tomohiro Fukao, Shuichi Nakamura, Hiromichi Kataura, Masashi Shiraishi

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (I_on/I_off) of 10⁴ and a field-effect mobility of 3.6 cm² V^-1 s^-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.

Original language	English
Pages (from-to)	6524-6527
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.45.6524
Publication status	Published - 2006 Aug 4
Externally published	Yes

Keywords

Carbon nanotube
Carrier injection
Field-effect transistor
Mobility
Organic semiconductor
Schottky barrier
Solution process

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.6524

Fingerprint Dive into the research topics of 'Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio'. Together they form a unique fingerprint.

Cite this

Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio. / Fukao, Tomohiro; Nakamura, Shuichi; Kataura, Hiromichi; Shiraishi, Masashi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 8 A, 04.08.2006, p. 6524-6527.

Research output: Contribution to journal › Article › peer-review

@article{f1eaa510d45c420db7ac98a2607386e4,

title = "Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio",

abstract = "We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.",

keywords = "Carbon nanotube, Carrier injection, Field-effect transistor, Mobility, Organic semiconductor, Schottky barrier, Solution process",

author = "Tomohiro Fukao and Shuichi Nakamura and Hiromichi Kataura and Masashi Shiraishi",

year = "2006",

month = aug,

day = "4",

doi = "10.1143/JJAP.45.6524",

language = "English",

volume = "45",

pages = "6524--6527",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

}

TY - JOUR

T1 - Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

AU - Fukao, Tomohiro

AU - Nakamura, Shuichi

AU - Kataura, Hiromichi

AU - Shiraishi, Masashi

PY - 2006/8/4

Y1 - 2006/8/4

N2 - We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.

AB - We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.

KW - Carbon nanotube

KW - Carrier injection

KW - Field-effect transistor

KW - Mobility

KW - Organic semiconductor

KW - Schottky barrier

KW - Solution process

UR - http://www.scopus.com/inward/record.url?scp=33748543994&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748543994&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.6524

DO - 10.1143/JJAP.45.6524

M3 - Article

AN - SCOPUS:33748543994

VL - 45

SP - 6524

EP - 6527

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 A

ER -