Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

Tomohiro Fukao, Shuichi Nakamura, Hiromichi Kataura, Masashi Shiraishi

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.

Original languageEnglish
Pages (from-to)6524-6527
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number8 A
DOIs
Publication statusPublished - 2006 Aug 4
Externally publishedYes

Keywords

  • Carbon nanotube
  • Carrier injection
  • Field-effect transistor
  • Mobility
  • Organic semiconductor
  • Schottky barrier
  • Solution process

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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