Abstract
We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (Ion/Ioff) of 104 and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170meV.
Original language | English |
---|---|
Pages (from-to) | 6524-6527 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 8 A |
DOIs | |
Publication status | Published - 2006 Aug 4 |
Externally published | Yes |
Keywords
- Carbon nanotube
- Carrier injection
- Field-effect transistor
- Mobility
- Organic semiconductor
- Schottky barrier
- Solution process
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)