Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates

Ha Hoang, Yuki Ueta, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara

Research output: Contribution to journalArticlepeer-review

Abstract

Solution processed silicon-doped indium oxide, In-Si-O (ISO), thin-film transistors (TFTs) were fabricated on hydrophilic and hydrophobic substrates. A precursor solution fabricated via dissolving indium chloride and tetraethyl orthosilicate into solvents of acetonitrile and ethylene glycol was spin coated on the hydrophilic substrate. Annealing conditions were optimized, and the highest mobility of the ISO TFT increased to 8.1 cm2/Vs. We used another precursor solution by dissolving indium(III) isopropoxide and tetraethyl orthosilicate into a solvent of 2-(diethylamino)ethanol, and we fabricated ISO TFTs on the hydrophobic substrates. The highest mobility corresponded to 3.4 × 10−1 cm2/Vs.

Original languageEnglish
Article number137860
JournalThin Solid Films
Volume698
DOIs
Publication statusPublished - 2020 Mar 31
Externally publishedYes

Keywords

  • Annealing
  • Electron mobility
  • Hydrophilic
  • Hydrophobic
  • Oxide semiconductor
  • Solution process
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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