Solution-processed dioctylbenzothienobenzothiophene-based top-gate organic transistors with high mobility, low threshold voltage, and high electrical stability

Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi, Kazuo Takimiya, Masaaki Ikeda, Hiroyoshi Naito

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

Dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT)-based organic field-effect transistors (OFETs) with a top-gate configuration, having fluoropolymer gate insulators, are fabricated by means of a spin-coating technique. The device fabrication is simple, and it enables us to obtain C 8-BTBT FETs having high field-effect mobility (μFET), low threshold voltage (Vth), and high electrical stability.We fabricate 116 top-gate C8-BTBT FETs having μFET of 1:59 ± 0:40 cm2 V-1 s-1 and Vth of -1:48 ± 3:02 V, and the maximum μFET is approximately 3 cm2 V-1 s-1. No changes in the devices characteristics are observed after applying a negative gate bias stress of -1:2 MV/cm for 104 s.

Original languageEnglish
Article number121601
JournalApplied Physics Express
Volume3
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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