Solution-processed dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene transistor memory based on phosphorus-doped silicon nanoparticles as a nano-floating gate

Yu Kimura, Azusa Hamaguchi, Yoshinori Ikeda, Takashi Nagase, Hiroyoshi Naito, Kazuo Takimiya, Takashi Shiro

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High-performance organic field-effect transistor (OFET) memories were developed by a simple solution process using phosphorus-doped silicon nanoparticles (Si NPs) and dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT) precursor-polystyrene (PS) blends. Si NPs were doped with phosphorus to control the ionization potential and functioned as a nano-floating gate. DNTT precursor-PS blends were converted to DNTT/PS layers on a Si NP layer by thermal annealing. The OFET memories clearly exhibited a memory window of 20V and a notably large threshold voltage (Vth) shift of 40Vafter the application of negative and positive voltages to the gate electrode.

Original languageEnglish
Article number101601
JournalApplied Physics Express
Volume8
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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