Abstract
Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V -1 s-1, with a highest value of 9.1 cm2 V -1 s-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.
Original language | English |
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Pages (from-to) | 523-526 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2011 Jan 25 |
Externally published | Yes |
Keywords
- charge transport
- field-effect transistors
- self-assembly
- single crystals
- solution processing
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering