Solution-processable organic single crystals with bandlike transport in field-effect transistors

Chuan Liu; Takeo Minari; Xubing Lu; Akichika Kumatani; Kazuo Takimiya; Kazuhito Tsukagoshi

doi:10.1002/adma.201002682

Solution-processable organic single crystals with bandlike transport in field-effect transistors

Chuan Liu, Takeo Minari, Xubing Lu, Akichika Kumatani, Kazuo Takimiya, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

315 Citations (Scopus)

Abstract

Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm² V ^-1 s^-1, with a highest value of 9.1 cm² V ^-1 s^-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

Original language	English
Pages (from-to)	523-526
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	4
DOIs	https://doi.org/10.1002/adma.201002682
Publication status	Published - 2011 Jan 25
Externally published	Yes

Keywords

charge transport
field-effect transistors
self-assembly
single crystals
solution processing

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201002682

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AU - Minari, Takeo

AU - Lu, Xubing

AU - Kumatani, Akichika

AU - Takimiya, Kazuo

AU - Tsukagoshi, Kazuhito

PY - 2011/1/25

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N2 - Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V -1 s-1, with a highest value of 9.1 cm2 V -1 s-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

AB - Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and a good semiconductor/insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm2 V -1 s-1, with a highest value of 9.1 cm2 V -1 s-1. The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.

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KW - solution processing

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