TY - JOUR
T1 - Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent
AU - Kawanishi, Sakiko
AU - Yoshikawa, Takeshi
AU - Morita, Kazuki
AU - Okada, Nobuhiro
AU - Kusunoki, Kazuhiko
AU - Kamei, Kazuhito
N1 - Funding Information:
This work was partly supported by Iketani Science and Technology Foundation . The authors are grateful to Mr. Taka Narumi for his help with conducting numerical analyses.
Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.
AB - The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.
KW - A1. Computer simulation
KW - A1. Crystal morphology
KW - A1. Fluid flows
KW - A2. Growth from solution
KW - A2. Traveling solvent zone growth
KW - B2. Semiconducting silicon compounds
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U2 - 10.1016/j.jcrysgro.2013.07.021
DO - 10.1016/j.jcrysgro.2013.07.021
M3 - Article
AN - SCOPUS:84882390606
VL - 381
SP - 121
EP - 126
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -