Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi2

H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi, M. Issiki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have measured the Seebeck coefficient and power factor of single crystalline β-FeSi2 grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Ωcm and 2×1019Cm-3 for p-type and 0.2 Ωcm and 5×1018 cm-3 for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 μV/K(p-type) and -700 μV/K(n-type) at 300K and showed a maximum value of 500 μV/K(p-type, T=∼25K) and 2100 μV/K(n-type, T=∼70K). The maximum power factor was 4.2 × 10 -6 Wcm-1K-2 (p-type, 7=170K) and 23 × 10-6 Wcm-1K-2 (n-type, P=100K). The value was more than one order of magnitude larger than that of previously reported.

Original languageEnglish
Title of host publicationProceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages241-244
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of
Duration: 2007 Jun 32007 Jun 7

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings

Other

OtherICT'07 - 26th International Conference on Thermoelectrics
CountryKorea, Republic of
CityJeju
Period07/6/307/6/7

ASJC Scopus subject areas

  • Engineering(all)

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