Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi2

H. Udono; H. Suzuki; K. Goto; S. Mashiko; M. Uchikoshi; M. Issiki

doi:10.1109/ICT.2007.4569469

Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi₂

H. Udono, H. Suzuki, K. Goto, S. Mashiko, M. Uchikoshi, M. Issiki

Collaborative Research Division of Non-ferrousMetallurgy and Environmental Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We have measured the Seebeck coefficient and power factor of single crystalline β-FeSi₂ grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Ωcm and 2×10¹⁹Cm^-3 for p-type and 0.2 Ωcm and 5×10¹⁸ cm^-3 for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 μV/K(p-type) and -700 μV/K(n-type) at 300K and showed a maximum value of 500 μV/K(p-type, T=∼25K) and 2100 μV/K(n-type, T=∼70K). The maximum power factor was 4.2 × 10 ^-6 Wcm^-1K^-2 (p-type, 7=170K) and 23 × 10^-6 Wcm^-1K^-2 (n-type, P=100K). The value was more than one order of magnitude larger than that of previously reported.

Original language	English
Title of host publication	Proceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages	241-244
Number of pages	4
DOIs	https://doi.org/10.1109/ICT.2007.4569469
Publication status	Published - 2007
Event	ICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of Duration: 2007 Jun 3 → 2007 Jun 7

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings

Other

Other	ICT'07 - 26th International Conference on Thermoelectrics
Country/Territory	Korea, Republic of
City	Jeju
Period	07/6/3 → 07/6/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ICT.2007.4569469

Cite this

Udono, H., Suzuki, H., Goto, K., Mashiko, S., Uchikoshi, M., & Issiki, M. (2007). Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi₂. In Proceedings ICT'07 - 26th International Conference on Thermoelectrics (pp. 241-244). [4569469] (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2007.4569469

Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi₂. / Udono, H.; Suzuki, H.; Goto, K. et al.

Proceedings ICT'07 - 26th International Conference on Thermoelectrics. 2007. p. 241-244 4569469 (International Conference on Thermoelectrics, ICT, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Udono, H, Suzuki, H, Goto, K, Mashiko, S, Uchikoshi, M & Issiki, M 2007, Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi₂. in Proceedings ICT'07 - 26th International Conference on Thermoelectrics., 4569469, International Conference on Thermoelectrics, ICT, Proceedings, pp. 241-244, ICT'07 - 26th International Conference on Thermoelectrics, Jeju, Korea, Republic of, 07/6/3. https://doi.org/10.1109/ICT.2007.4569469

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abstract = "We have measured the Seebeck coefficient and power factor of single crystalline β-FeSi2 grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Ωcm and 2×1019Cm-3 for p-type and 0.2 Ωcm and 5×1018 cm-3 for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 μV/K(p-type) and -700 μV/K(n-type) at 300K and showed a maximum value of 500 μV/K(p-type, T=∼25K) and 2100 μV/K(n-type, T=∼70K). The maximum power factor was 4.2 × 10 -6 Wcm-1K-2 (p-type, 7=170K) and 23 × 10-6 Wcm-1K-2 (n-type, P=100K). The value was more than one order of magnitude larger than that of previously reported.",

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N2 - We have measured the Seebeck coefficient and power factor of single crystalline β-FeSi2 grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Ωcm and 2×1019Cm-3 for p-type and 0.2 Ωcm and 5×1018 cm-3 for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 μV/K(p-type) and -700 μV/K(n-type) at 300K and showed a maximum value of 500 μV/K(p-type, T=∼25K) and 2100 μV/K(n-type, T=∼70K). The maximum power factor was 4.2 × 10 -6 Wcm-1K-2 (p-type, 7=170K) and 23 × 10-6 Wcm-1K-2 (n-type, P=100K). The value was more than one order of magnitude larger than that of previously reported.

AB - We have measured the Seebeck coefficient and power factor of single crystalline β-FeSi2 grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Ωcm and 2×1019Cm-3 for p-type and 0.2 Ωcm and 5×1018 cm-3 for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 μV/K(p-type) and -700 μV/K(n-type) at 300K and showed a maximum value of 500 μV/K(p-type, T=∼25K) and 2100 μV/K(n-type, T=∼70K). The maximum power factor was 4.2 × 10 -6 Wcm-1K-2 (p-type, 7=170K) and 23 × 10-6 Wcm-1K-2 (n-type, P=100K). The value was more than one order of magnitude larger than that of previously reported.

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