Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping

M. Moniwa, K. Kusukawa, M. Ohkura, E. Takeda

    Research output: Contribution to conferencePaperpeer-review

    1 Citation (Scopus)

    Abstract

    A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.

    Original languageEnglish
    Pages32-34
    Number of pages3
    DOIs
    Publication statusPublished - 1992 Jan 1
    EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
    Duration: 1992 Aug 261992 Aug 28

    Other

    OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
    CityTsukuba, Jpn
    Period92/8/2692/8/28

    ASJC Scopus subject areas

    • Engineering(all)

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