A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas