Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping

M. Moniwa; K. Kusukawa; M. Ohkura; E. Takeda

doi:10.7567/ssdm.1992.a-2-2

Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping

M. Moniwa, K. Kusukawa, M. Ohkura, E. Takeda

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.

Original language	English
Pages	32-34
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.a-2-2
Publication status	Published - 1992 Jan 1
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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10.7567/ssdm.1992.a-2-2

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Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping. / Moniwa, M.; Kusukawa, K.; Ohkura, M. et al.

1992. 32-34 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

Research output: Contribution to conference › Paper › peer-review

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title = "Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping",

abstract = "A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.",

author = "M. Moniwa and K. Kusukawa and M. Ohkura and E. Takeda",

year = "1992",

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day = "1",

doi = "10.7567/ssdm.1992.a-2-2",

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T1 - Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping

AU - Moniwa, M.

AU - Kusukawa, K.

AU - Ohkura, M.

AU - Takeda, E.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.

AB - A novel technique is proposed to control solid-phase nucleation. The technique utilizes a nucleation-enhancement effect obtained from the step-structure of the substrate and local P-doping. This enables the formation of polycrystalline Si (poly-Si) films whose device area consists of a single grain.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026961176&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1992.a-2-2

DO - 10.7567/ssdm.1992.a-2-2

M3 - Paper

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SP - 32

EP - 34

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Solid-phase nucleation control of amorphous Si by step-structure of substrate surface and local P-doping

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