SOI platform and III-V integrated active photonic device by direct bonding for data communication

Linghan Li, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)

    Abstract

    The recent research progress of Si/III-V hetero-integration by Ar/O 2 plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current- pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5 0C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm.

    Original languageEnglish
    Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    Number of pages1
    DOIs
    Publication statusPublished - 2012 Aug 15
    Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
    Duration: 2012 May 222012 May 23

    Publication series

    NameProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

    Other

    Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
    CountryJapan
    CityTokyo
    Period12/5/2212/5/23

    ASJC Scopus subject areas

    • Computer Graphics and Computer-Aided Design
    • Computer Vision and Pattern Recognition

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