Abstract
SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.
| Original language | English |
|---|---|
| Title of host publication | Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 63-64 |
| Number of pages | 2 |
| ISBN (Electronic) | 4891140283, 9784891140281 |
| DOIs | |
| Publication status | Published - 2002 Jan 1 |
| Event | 3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan Duration: 2002 Dec 2 → 2002 Dec 3 |
Publication series
| Name | Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 |
|---|
Other
| Other | 3rd International Workshop on Junction Technology, IWJT 2002 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 02/12/2 → 02/12/3 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Fingerprint Dive into the research topics of 'SOI NMOSFETs with SiGe elevated S/D and Ni silicide'. Together they form a unique fingerprint.
Cite this
Choi, H., Oh, H., Shim, J. C., Sakaguchi, T., Kurino, H., & Koyanagi, M. (2002). SOI NMOSFETs with SiGe elevated S/D and Ni silicide. In Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 (pp. 63-64). [1225204] (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2002.1225204