SOI NMOSFETs with SiGe elevated S/D and Ni silicide

Hoon Choi; Hyuckjae Oh; Jeoung Chill Shim; T. Sakaguchi; H. Kurino; Mitsumasa Koyanagi

doi:10.1109/IWJT.2002.1225204

SOI NMOSFETs with SiGe elevated S/D and Ni silicide

Hoon Choi, Hyuckjae Oh, Jeoung Chill Shim, T. Sakaguchi, H. Kurino, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.

Original language	English
Title of host publication	Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	63-64
Number of pages	2
ISBN (Electronic)	4891140283, 9784891140281
DOIs	https://doi.org/10.1109/IWJT.2002.1225204
Publication status	Published - 2002 Jan 1
Event	3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan Duration: 2002 Dec 2 → 2002 Dec 3

Publication series

Name	Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Other

Other	3rd International Workshop on Junction Technology, IWJT 2002
Country	Japan
City	Tokyo
Period	02/12/2 → 02/12/3

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IWJT.2002.1225204

Fingerprint Dive into the research topics of 'SOI NMOSFETs with SiGe elevated S/D and Ni silicide'. Together they form a unique fingerprint.

Cite this

Choi, H., Oh, H., Shim, J. C., Sakaguchi, T., Kurino, H., & Koyanagi, M. (2002). SOI NMOSFETs with SiGe elevated S/D and Ni silicide. In Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 (pp. 63-64). [1225204] (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2002.1225204

SOI NMOSFETs with SiGe elevated S/D and Ni silicide. / Choi, Hoon; Oh, Hyuckjae; Shim, Jeoung Chill; Sakaguchi, T.; Kurino, H.; Koyanagi, Mitsumasa.

Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 63-64 1225204 (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Choi, H, Oh, H, Shim, JC, Sakaguchi, T, Kurino, H & Koyanagi, M 2002, SOI NMOSFETs with SiGe elevated S/D and Ni silicide. in Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002., 1225204, Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002, Institute of Electrical and Electronics Engineers Inc., pp. 63-64, 3rd International Workshop on Junction Technology, IWJT 2002, Tokyo, Japan, 02/12/2. https://doi.org/10.1109/IWJT.2002.1225204

Choi H, Oh H, Shim JC, Sakaguchi T, Kurino H, Koyanagi M. SOI NMOSFETs with SiGe elevated S/D and Ni silicide. In Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 63-64. 1225204. (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002). https://doi.org/10.1109/IWJT.2002.1225204

Choi, Hoon ; Oh, Hyuckjae ; Shim, Jeoung Chill ; Sakaguchi, T. ; Kurino, H. ; Koyanagi, Mitsumasa. / SOI NMOSFETs with SiGe elevated S/D and Ni silicide. Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 63-64 (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002).

@inproceedings{92b8b4c8f88b43919e05b7d5ad83208b,

title = "SOI NMOSFETs with SiGe elevated S/D and Ni silicide",

abstract = "SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.",

author = "Hoon Choi and Hyuckjae Oh and Shim, {Jeoung Chill} and T. Sakaguchi and H. Kurino and Mitsumasa Koyanagi",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/IWJT.2002.1225204",

language = "English",

series = "Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "63--64",

booktitle = "Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002",

note = "3rd International Workshop on Junction Technology, IWJT 2002 ; Conference date: 02-12-2002 Through 03-12-2002",

}

TY - GEN

T1 - SOI NMOSFETs with SiGe elevated S/D and Ni silicide

AU - Choi, Hoon

AU - Oh, Hyuckjae

AU - Shim, Jeoung Chill

AU - Sakaguchi, T.

AU - Kurino, H.

AU - Koyanagi, Mitsumasa

PY - 2002/1/1

Y1 - 2002/1/1

N2 - SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.

AB - SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.

UR - http://www.scopus.com/inward/record.url?scp=84963525786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963525786&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2002.1225204

DO - 10.1109/IWJT.2002.1225204

M3 - Conference contribution

AN - SCOPUS:84963525786

T3 - Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

SP - 63

EP - 64

BT - Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd International Workshop on Junction Technology, IWJT 2002

Y2 - 2 December 2002 through 3 December 2002

ER -

SOI NMOSFETs with SiGe elevated S/D and Ni silicide

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this