TY - GEN
T1 - SOI NMOSFETs with SiGe elevated S/D and Ni silicide
AU - Choi, Hoon
AU - Oh, Hyuckjae
AU - Shim, Jeoung Chill
AU - Sakaguchi, T.
AU - Kurino, H.
AU - Koyanagi, Mitsumasa
PY - 2002/1/1
Y1 - 2002/1/1
N2 - SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.
AB - SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.
UR - http://www.scopus.com/inward/record.url?scp=84963525786&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963525786&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2002.1225204
DO - 10.1109/IWJT.2002.1225204
M3 - Conference contribution
AN - SCOPUS:84963525786
T3 - Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
SP - 63
EP - 64
BT - Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd International Workshop on Junction Technology, IWJT 2002
Y2 - 2 December 2002 through 3 December 2002
ER -