SOI NMOSFETs with SiGe elevated S/D and Ni silicide

Hoon Choi, Hyuckjae Oh, Jeoung Chill Shim, T. Sakaguchi, H. Kurino, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7Ω/square could be obtained.

Original languageEnglish
Title of host publicationExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-64
Number of pages2
ISBN (Electronic)4891140283, 9784891140281
DOIs
Publication statusPublished - 2002 Jan 1
Event3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan
Duration: 2002 Dec 22002 Dec 3

Publication series

NameExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Other

Other3rd International Workshop on Junction Technology, IWJT 2002
CountryJapan
CityTokyo
Period02/12/202/12/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Choi, H., Oh, H., Shim, J. C., Sakaguchi, T., Kurino, H., & Koyanagi, M. (2002). SOI NMOSFETs with SiGe elevated S/D and Ni silicide. In Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 (pp. 63-64). [1225204] (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2002.1225204