Soft X-ray absorption and emission study of silicon oxynitride/Si(100) interface

Yoshiyuki Yamashita, Kazuhiro Oguchi, Kozo Mukai, Jun Yoshinobu, Yoshihisa Harada, Takashi Tokushima, Shik Shin, Naoyoshi Tamura, Hiroshi Nohira, Takeo Hattori

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The atom-specific electronic structure at the oxynitride/Si interface was investigated by soft X-ray absorption and emission spectroscopy in order to elucidate the relationship of the incorporation effect of nitrogen atoms at the interface with the performance of metal-oxide-silicon devices. At the interface, the conduction band minimum (CBM) decreases when the concentration of N atoms at the interface increases. For valence states, the width of the nonbonding states of N atoms increases when the concentration of N atoms is high, indicating that an inhomogeneous interface is formed. Thus, the excessive incorporation of nitrogen atoms at the SiO2/Si(100) interface decreases CBM and induces the formation of a more inhomogeneous interface, which decreases carrier mobility in the channel region.

    Original languageEnglish
    Pages (from-to)L77-L79
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume46
    Issue number1-3
    DOIs
    Publication statusPublished - 2007 Jan 12

    Keywords

    • Interface
    • Oxynitride
    • Si(100)
    • X-ray absorption
    • X-ray emission

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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  • Cite this

    Yamashita, Y., Oguchi, K., Mukai, K., Yoshinobu, J., Harada, Y., Tokushima, T., Shin, S., Tamura, N., Nohira, H., & Hattori, T. (2007). Soft X-ray absorption and emission study of silicon oxynitride/Si(100) interface. Japanese Journal of Applied Physics, Part 2: Letters, 46(1-3), L77-L79. https://doi.org/10.1143/JJAP.46.L77