Recently, resonant inverters have been employed to generate high voltage high frequency AC power for plasma generator of the semiconductor processing equipment. This inverter is beneficial in low switching loss owing to its natural soft-switching capability under inductive load impedance. Generally, the resonant inverter for plasma generator is designed to have inductive load using an impedance matching circuit that interfaces the inverter and the plasma reactor. However, the load impedance often fluctuates according to the state of the plasma, momentarily causing the capacitive load impedance. In this case, the inverter is generally controlled to restrict the output power for circuit protection from excessive switching loss, although this will result in unstable plasma, deteriorating the quality of the semiconductor processing. This paper addressed this difficulty by applying a soft-switching technique to the resonant inverter. This soft-switching technique can be utilized regardless to the capacitive or inductive load. Experiment was carried out to evaluate the effectiveness of the proposed technique. As a result, the effective reduction of the switching loss was successfully verified even under the capacitive load impedance.