Soft magnetic properties and microstructure of high moment Fe-N-Al-O films for recording heads

Shoji Ikeda, Yuji Uehara, Ikuya Tagawa, Naoki Takeguchi, Masahiro Kakehi

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

Fe-N-Al-O alloy films were fabricated by rf reactive sputtering in a mixed Ar+N2 plasma. The Al and O contents in films were varied by the area ratio of Al2 O3 chips placed on an Fe target. We examined the effects of additional elements, such as Al and O, on magnetic and electrical properties of the Fe-N-Al-O films, and we investigated the relationship between soft magnetic properties and microstructure. The permeability reaches a maximum of about 1800, when the Al+O content range is 10-16 at%. Fe-N-Al-O films in this range have 4πMs=19-20 kG and ρ = 60-100 μΩcm. The real part of permeability (μ′) of the 0.7-μm-thick Fe79N5Al6O10 film remains constant up to 300 MHz. The as-deposited Fe-N-Al-O film showing soft magnetic properties has homogeneous microstructure with a grain size of about 5 nm. It seems that the addition of Al and O to Fe-N films is effective in suppressing grain growth, and contributes to the formation of homogeneous film structure.

Original languageEnglish
Pages (from-to)3470-3472
Number of pages3
JournalIEEE Transactions on Magnetics
Volume36
Issue number5 I
DOIs
Publication statusPublished - 2000 Sep
Externally publishedYes
Event2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
Duration: 2000 Apr 92000 Apr 12

Keywords

  • Fe-N-Al-O film
  • Resistivity
  • Saturation magnetization
  • Soft magnetic properties
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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