Soft-delay-error evaluation in content-addressable memory

Naoya Onizawa, Shoun Matsunaga, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Takahiro Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


In this paper, a delay-variation effect under alpha-particle strikes is evaluated in content-addressable memories (CAMs). The particle strikes into transistors induce a current-pulse signal that causes the delay variation, resulting in a timing error, called a soft-delay error (SDE). The delay variations in two different CAMs designed in a 90nm CMOS technology are simulated in NS-SPICE using a charge-injection model that generates a current-pulse signal. The SDE effects are discussed, where one of the CAMs is a traditional 9-transistor-cell CAM and the other one is a magnetic-tunnel- junction (MTJ)/MOS hybrid CAM that operates based on a multiple-valued current-mode logic. The simulation results show that there is a trade-off between the amount of current (thus power dissipation) and the SDE effects in the MTJ/MOS hybrid CAM.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 44th International Symposium on Multiple-Valued Logic, ISMVL 2014
PublisherIEEE Computer Society
Number of pages6
ISBN (Print)9781479935345
Publication statusPublished - 2014 Jan 1
Event44th IEEE International Symposium on Multiple-Valued Logic, ISMVL 2014 - Bremen, Germany
Duration: 2014 May 192014 May 21

Publication series

NameProceedings of The International Symposium on Multiple-Valued Logic
ISSN (Print)0195-623X


Other44th IEEE International Symposium on Multiple-Valued Logic, ISMVL 2014


  • CAM
  • associative memory
  • magnetic-tunnel-junction (MTJ) device
  • nonvolatile memory
  • single-event upset (SEU)
  • soft error

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)


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