Sn nanothreads in GaAs: Experiment and simulation

I. Semenikhin, V. Vyurkov, A. Bugaev, R. Khabibullin, D. Ponomarev, A. Yachmenev, P. Maltsev, M. Ryzhii, T. Otsuji, V. Ryzhii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Original languageEnglish
Title of host publicationInternational Conference on Micro- and Nano-Electronics 2016
EditorsVladimir F. Lukichev, Konstantin V. Rudenko
PublisherSPIE
ISBN (Electronic)9781510609495
DOIs
Publication statusPublished - 2016
EventInternational Conference on Micro- and Nanoelectronics - 2016, ICMNE 2016 - Zvenigorod, Russian Federation
Duration: 2016 Oct 32016 Oct 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10224
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherInternational Conference on Micro- and Nanoelectronics - 2016, ICMNE 2016
CountryRussian Federation
CityZvenigorod
Period16/10/316/10/7

Keywords

  • Conduction anisotropy
  • Hot-electron bolometer
  • Nanothreads
  • Vicinal surface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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