TY - GEN
T1 - Sn-Cu thin film transient liquid phase bonding test with different underlayers using fully-in-vacuum wafer aligner/bonder
AU - Hikichi, K.
AU - Matsuzaki, S.
AU - Nonomura, Y.
AU - Funabashi, H.
AU - Hata, Y.
AU - Esashi, Masayoshi
AU - Tanaka, S.
PY - 2013
Y1 - 2013
N2 - This paper compares different diffusion barriers for thin film transient liquid phase (TLP) bonding. Thin film TLP bonding has some advantages such as low process temperature and a large tolerance of bonding surface roughness. However, metal diffusion phenomena in TLP bonding is so complicated that bonding strength is dependent on metal systems. In this study, Sn-Cu TLP system was selected and its bonding strengths with several diffusion barriers were evaluated by die shear test. The microstructure of the bonded metal part was examined by scanning electron microscopy and energy dispersive X-ray spectrometry. The diffusion barriers of multilayered Cu/Cr, Cr-Cu and Ni worked, and the best bonding strength was obtained using Au/Sn/Cu/Cr-Cu/Cr metal system (10/200/1000/100/100 nm), where Cu thickness is doubled compared with the other samples. This paper also describes a new wafer bonder in which alignment, surface treatment and bonding can be performed without breaking vacuum.
AB - This paper compares different diffusion barriers for thin film transient liquid phase (TLP) bonding. Thin film TLP bonding has some advantages such as low process temperature and a large tolerance of bonding surface roughness. However, metal diffusion phenomena in TLP bonding is so complicated that bonding strength is dependent on metal systems. In this study, Sn-Cu TLP system was selected and its bonding strengths with several diffusion barriers were evaluated by die shear test. The microstructure of the bonded metal part was examined by scanning electron microscopy and energy dispersive X-ray spectrometry. The diffusion barriers of multilayered Cu/Cr, Cr-Cu and Ni worked, and the best bonding strength was obtained using Au/Sn/Cu/Cr-Cu/Cr metal system (10/200/1000/100/100 nm), where Cu thickness is doubled compared with the other samples. This paper also describes a new wafer bonder in which alignment, surface treatment and bonding can be performed without breaking vacuum.
KW - Copper tin
KW - Diffusion barrier
KW - Shear bonding strength
KW - Transient liquid phase (TLP) bonding
KW - Wafer-level packaging
UR - http://www.scopus.com/inward/record.url?scp=84891675448&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891675448&partnerID=8YFLogxK
U2 - 10.1109/Transducers.2013.6626956
DO - 10.1109/Transducers.2013.6626956
M3 - Conference contribution
AN - SCOPUS:84891675448
SN - 9781467359818
T3 - 2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
SP - 1071
EP - 1074
BT - 2013 Transducers and Eurosensors XXVII
T2 - 2013 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013
Y2 - 16 June 2013 through 20 June 2013
ER -