The deep reactive ion etching with a mixture of sulfur hexafluoride (SF6) and xenon (Xe) gases was used for analyzing the smooth surface glass. The surface average roughness of 23 Å was achieved with SF 6/Xe(=1/1) and 18 Å with SF6/Ar(=1/4) under a condition of 0.2 Pa pressure and -390 V self-bias voltage. The average roughness of the etched surface was smooth for the bottom and the sidewalls. The results show that the average surface roughness of the side wall was around 16 nm for 50-μm-deep etching.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Nov 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering