Small geometry effects in n- and p-channel polysilicon thin film transistors

Alan G. Lewis, I. Wei Wu, Tiao Y. Huang, Mitsu Koyanagi, Anne Chiang, Richard H. Bruce

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)

Abstract

The authors describe the results of an experimental study of small-geometry effects in n- and p-channel polysilicon TFTs (thin film transistors) fabricated on quartz substrates. Short-channel effects are shown to be severe, with significant threshold shifts observed in devices with gate lengths of less than about 8 μm and degradation in drain breakdown voltages for gate lengths below about 5 μm. The performance of simple digital CMOS circuits fabricated using TFTs with a range of gate lengths is also reported, and the improvement in speed achieved by reducing gate lengths is shown. In particular, the operation of shift registers, designed using 5-μm-long TFTs at clock frequencies in excess of 50 MHz, is demonstrated.

Original languageEnglish
Pages (from-to)260-263
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec 1
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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