Small band gap polymers incorporating a strong acceptor, thieno[3,2-b]thiophene-2,5-dione, with p-channel and ambipolar charge transport characteristics

Itaru Osaka, Toru Abe, Hiroki Mori, Masahiko Saito, Noriko Takemura, Tomoyuki Koganezawa, Kazuo Takimiya

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We present new donor-acceptor semiconducting polymers based on a strong acceptor unit, thieno[3,2-b]thiophene-2,5-dione (TTD). The polymers exhibit a deep LUMO energy level of around -4 eV while preserving a relatively low-lying HOMO energy level of below -5 eV and a quite small optical band gap of 1.2 eV. Interestingly, bottom-gate-top-contact transistor devices based on the polymers demonstrate p-channel behavior with high hole-mobilites of 1.38 cm2 V-1 s-1, whereas top-gate-bottom-contact devices show ambipolar behavior with hole and electron mobilities of ∼0.12 and ∼0.20 cm2 V-1 s-1, respectively. These results indicate the great potential of TTD to be used as the building unit for high-performance semiconducting polymers.

Original languageEnglish
Pages (from-to)2307-2312
Number of pages6
JournalJournal of Materials Chemistry C
Volume2
Issue number13
DOIs
Publication statusPublished - 2014 Apr 7
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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