Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films

Xin Tong Zhang; Hong Wu Liu; Taketo Taguchi; Qing Bo Meng; Osamu Sato; Akira Fujishima

doi:10.1016/j.solmat.2003.11.005

Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al₂O₃-coated nanoporous TiO₂ films

Xin Tong Zhang, Hong Wu Liu, Taketo Taguchi, Qing Bo Meng, Osamu Sato, Akira Fujishima

Research output: Contribution to journal › Article › peer-review

124 Citations (Scopus)

Abstract

Al₂O₃-coated TiO₂ porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al ₂O₃ interlayer slowed down the interfacial recombination of electrons in TiO₂ with holes in CuI by forming a potential barrier at the TiO₂/CuI interface. As a consequence, the cell made from Al₂O₃-coated TiO₂ film showed superior cell performance than the cell made from TiO₂ film only, especially under relative high intensity of simulated sunlight.

Original language	English
Pages (from-to)	197-203
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	81
Issue number	2
DOIs	https://doi.org/10.1016/j.solmat.2003.11.005
Publication status	Published - 2004 Feb 6
Externally published	Yes

Keywords

AlO
CuI
Interfacial charge recombination
Solid-state dye-sensitized solar cell
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2003.11.005

Cite this

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title = "Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films",

abstract = "Al2O3-coated TiO2 porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al 2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in CuI by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight.",

keywords = "AlO, CuI, Interfacial charge recombination, Solid-state dye-sensitized solar cell, TiO",

author = "Zhang, {Xin Tong} and Liu, {Hong Wu} and Taketo Taguchi and Meng, {Qing Bo} and Osamu Sato and Akira Fujishima",

note = "Funding Information: We gratefully acknowledge the support by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy Trade Industry of Japan, and a Grant-in Aid for Scientific Research on Priority Areas (4 1 7) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of the Japanese Government.",

year = "2004",

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doi = "10.1016/j.solmat.2003.11.005",

language = "English",

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T1 - Slow interfacial charge recombination in solid-state dye-sensitized solar cell using Al2O3-coated nanoporous TiO2 films

AU - Zhang, Xin Tong

AU - Liu, Hong Wu

AU - Taguchi, Taketo

AU - Meng, Qing Bo

AU - Sato, Osamu

AU - Fujishima, Akira

N1 - Funding Information: We gratefully acknowledge the support by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy Trade Industry of Japan, and a Grant-in Aid for Scientific Research on Priority Areas (4 1 7) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of the Japanese Government.

PY - 2004/2/6

Y1 - 2004/2/6

N2 - Al2O3-coated TiO2 porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al 2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in CuI by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight.

AB - Al2O3-coated TiO2 porous films were used to fabricate solid-state dye-sensitized solar cells using CuI as hole conductor. Investigation with transient photovoltage measurements showed that the Al 2O3 interlayer slowed down the interfacial recombination of electrons in TiO2 with holes in CuI by forming a potential barrier at the TiO2/CuI interface. As a consequence, the cell made from Al2O3-coated TiO2 film showed superior cell performance than the cell made from TiO2 film only, especially under relative high intensity of simulated sunlight.

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KW - Interfacial charge recombination

KW - Solid-state dye-sensitized solar cell

KW - TiO

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