Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix

H. Takamiya, M. Miura, J. Mitsui, S. Koh, T. Hattori, Y. Shiraki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The growth mode of the self-assembled Ge islands on a Si (001) substrate was studied when the Si substrate contained the buried Ge islands grown at the lower temperature. The drastic reduction of the island sizes and the increase of the island density in the upper layer were observed in the presence of the buried islands. From the observations of the atomic force microscopy (AFM) and the photoluminescence (PL) spectroscopy, the islands in the upper layer were found to possess very similar properties to those of the buried islands. These results are explained as that the strain fields from the buried islands drastically modified the growth mode of the Ge islands in the upper layer.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
DOIs
Publication statusPublished - 2002 Feb 14
Externally publishedYes

Keywords

  • Buried islands
  • Ge islands
  • Hut-clusters
  • Low temperature growth
  • Ordering of the islands
  • Size reduction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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