Size of orbital-ordering domain controlled by the itinerancy of the 3d electrons in a manganite thin film

Y. Wakabayashi, H. Sagayama, T. Arima, M. Nakamura, Y. Ogimoto, Y. Kubo, K. Miyano, H. Sawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film Nd0.5 Sr0.5 MnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 180 K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A type), and the other has a small itinerancy (CE type), while the lattice distortions they cause are almost equal. Our x-ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the difference in orbital arrangement and resulting itinerancy of the LT phases.

Original languageEnglish
Article number220403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number22
DOIs
Publication statusPublished - 2009 Jun 10
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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