Size effects on DC and low-frequency-noise characteristics of epitaxially grown raised-emitter SiGe HBTs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

DC and low-frequency-noise characteristics of epitaxially grown raised-emitter (ERE) SiGe HBTs were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise. An ERE SiGe HBT with a scaled emitter exhibits about 10 times smaller 1/f noise than a poly-Si emitter SiGe HBT.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages162-165
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 2
Externally publishedYes
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 2007 Jan 102007 Jan 12

Publication series

Name2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Other

Other2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
CountryUnited States
CityLong Beach, CA
Period07/1/1007/1/12

Keywords

  • Epitaxial growth
  • Heterojunction bipolar transistor (HBT)
  • Low-frequency noise (1/f noise)
  • Polysilicon (poly-Si) emitter
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Washio, K. (2007). Size effects on DC and low-frequency-noise characteristics of epitaxially grown raised-emitter SiGe HBTs. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 (pp. 162-165). [4117351] (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07). https://doi.org/10.1109/SMIC.2007.322784