Size effect on quasibound states and negative differential resistances in step-barrier structures

Yong Guo, Bing Lin Gu, Zhong Zeng, Yoshiyuki Kawazoe

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Electronic states and tunneling properties in step-barrier structures have been investigated. The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume261
Issue number1-2
DOIs
Publication statusPublished - 1999 Oct 4

Keywords

  • Heterojunctions
  • Negative-differential resistance
  • Quasibound states
  • Resonant tunneling

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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