Abstract
Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.
Original language | English |
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Pages (from-to) | 2028-2032 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2003 Aug 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)