Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota, Y. Ando, T. Miyazaki, G. Reiss, H. Brückl, W. Schepper, J. Wecker, G. Gieres

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

Original languageEnglish
Pages (from-to)2028-2032
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
Publication statusPublished - 2003 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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