Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota; Y. Ando; T. Miyazaki; G. Reiss; H. Brückl; W. Schepper; J. Wecker; G. Gieres

doi:10.1063/1.1588357

Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

H. Kubota, Y. Ando, T. Miyazaki, G. Reiss, H. Brückl, W. Schepper, J. Wecker, G. Gieres

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

Original language	English
Pages (from-to)	2028-2032
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	3
DOIs	https://doi.org/10.1063/1.1588357
Publication status	Published - 2003 Aug 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1588357

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abstract = "Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.",

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AU - Kubota, H.

AU - Ando, Y.

AU - Miyazaki, T.

AU - Reiss, G.

AU - Brückl, H.

AU - Schepper, W.

AU - Wecker, J.

AU - Gieres, G.

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N2 - Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

AB - Submicron sized rectangular magnetic tunnel junctions (MTJ) with various aspect ratios were fabricated using an electron beam lithographic technique. Conductive atomic force microscopy was applied to resistance and magnetoresistance measurement for MTJs. The smallest MTJ with junction area of 50 nm×50 nm showed sharp switching. This suggested that MTJs could be applied to memory cells in ultrahigh density magnetic random access memory.

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JF - Journal of Applied Physics

SN - 0021-8979

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ER -

Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale

Abstract

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