TY - JOUR
T1 - Size dependence of switching behavior in single epitaxial Co/Pt multilayer nanodots
AU - Lao, Bin
AU - Okamoto, Satoshi
AU - Kikuchi, Nobuaki
AU - Kitakami, Osamu
N1 - Funding Information:
This work was partially supported by the Elements Strategy Initiative Center for Magnetic Materials from MEXT and the Management Expenses Grants for National Universities Corporations from MEXT, Strategic Promotion of Innovative Research and Development from the Japan Science and Technology Agency (JST), and the Advanced Storage Research Consortium in Japan.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/7
Y1 - 2016/7
N2 - We have studied the magnetization switching behavior in single nanodots of an epitaxially grown Co/Pt multilayer with various dot diameters (d) ranging from 120 to 1600 nm. The switching behaviors in all the dots used in this study are considered to be of the nucleation type from the angular dependence of the switching field. However, detailed analysis of the thermally activated magnetization switching reveals that there is a critical diameter (dc) of 400nm above which the switching process changes. For d < dc, the switching behavior of the dot is well explained by the nucleation process based on the single-energy barrier model. On the other hand, the switching behavior for d ; dc obviously deviates from that for d < dc and can be plausibly explained by the multi-barrier model.
AB - We have studied the magnetization switching behavior in single nanodots of an epitaxially grown Co/Pt multilayer with various dot diameters (d) ranging from 120 to 1600 nm. The switching behaviors in all the dots used in this study are considered to be of the nucleation type from the angular dependence of the switching field. However, detailed analysis of the thermally activated magnetization switching reveals that there is a critical diameter (dc) of 400nm above which the switching process changes. For d < dc, the switching behavior of the dot is well explained by the nucleation process based on the single-energy barrier model. On the other hand, the switching behavior for d ; dc obviously deviates from that for d < dc and can be plausibly explained by the multi-barrier model.
UR - http://www.scopus.com/inward/record.url?scp=84979266016&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84979266016&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.07MC01
DO - 10.7567/JJAP.55.07MC01
M3 - Article
AN - SCOPUS:84979266016
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 07MC01
ER -