Site-selective epitaxy of graphene on si wafers

Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The fusion of graphene with silicon may provide an effective solution to the problem of scale in electronic devices. This approach will allow the excellent electronic properties of graphene to be combined with known Si device technologies. We review the epitaxial growth of graphene on Si substrates (GOS) for fabricating transistors. GOS has been multifunctionalized by controlling the orientation of the Si substrate. The site-selective epitaxy of GOS has also been developed by controlling the base SiC thin films. These results demonstrate that GOS is suitable for integrated devices.

Original languageEnglish
Article number6516531
Pages (from-to)1557-1566
Number of pages10
JournalProceedings of the IEEE
Volume101
Issue number7
DOIs
Publication statusPublished - 2013 Jan 1

Keywords

  • Epitaxy
  • Si
  • graphene
  • substrate microfabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Fukidome, H., Kawai, Y., Handa, H., Hibino, H., Miyashita, H., Kotsugi, M., Ohkochi, T., Jung, M. H., Suemitsu, T., Kinoshita, T., Otsuji, T., & Suemitsu, M. (2013). Site-selective epitaxy of graphene on si wafers. Proceedings of the IEEE, 101(7), 1557-1566. [6516531]. https://doi.org/10.1109/JPROC.2013.2259131