TY - JOUR
T1 - Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism
AU - Wang, Wei
AU - Isshiki, Hideo
AU - Yugo, Shigemi
AU - Saito, Riichiro
AU - Kimura, Tadamasa
N1 - Funding Information:
This work is partly supported by the grant in aid (no. 07555135) by the Ministry of Education, Science, Sports and Culture. We thank Dr. H. Yasuhara and Dr. A. Sato of Fujikura Co. Ltd. for their support of this research. We thank also Miss. S. Ide for her technical help.
PY - 2000/5
Y1 - 2000/5
N2 - Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 μm due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 μm luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals.
AB - Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 μm due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 μm luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals.
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U2 - 10.1016/S0022-2313(99)00342-7
DO - 10.1016/S0022-2313(99)00342-7
M3 - Conference article
AN - SCOPUS:0033738087
VL - 87
SP - 319
EP - 322
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
T2 - International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99)
Y2 - 23 August 1999 through 27 August 1999
ER -