Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism

Wei Wang, Hideo Isshiki, Shigemi Yugo, Riichiro Saito, Tadamasa Kimura

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 μm due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 μm luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalJournal of Luminescence
Volume87
DOIs
Publication statusPublished - 2000 May
EventInternational Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99) - Osaka, Jpn
Duration: 1999 Aug 231999 Aug 27

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Site of the Er<sup>3+</sup> optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism'. Together they form a unique fingerprint.

Cite this