Si2H6 adsorption and hydrogen desorption on Si(100) investigated by infrared spectroscopy

Michio Niwano, Masanori Shinohara, Yoichiro Neo, Kuniyoshi Yokoo

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)

Abstract

The adsorption and decomposition of disilane on Si(100)(2×1) was investigated using in-situ infrared (IR) absorption spectroscopy. The IR data demonstrate that upon room-temperature adsorption, disilane dissociatively adsorbs on the unsaturated dangling bonds of dimers with the dimer bonds unbroken, to produce mono-, di-, and tri-hydride species. At low coverages, dissociative adsorption without breaking of the Si-Si bond of Si2H6 is favored. Thermal annealing following room-temperature disilane adsorption produces the doubly-occupied adatom dimers (DOD, HSi-SiH) and isolated monohydride species. These hydride species are generated via the rupture of dimer bonds of the substrate. Hydrogen desorption from the isolated monohydride site occurs at lower temperatures than from the DOD site.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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