Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs

Katsuya Oda, Eiji Ohue, Masamichi Tanabe, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


Si1-xGex low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H2 pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si1-xGex layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si1-xGex low-temperature selective epitaxial growth.

Original languageEnglish
Pages (from-to)358-361
Number of pages4
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
Externally publishedYes
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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