Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs

Katsuya Oda; Eiji Ohue; Masamichi Tanabe; Hiromi Shimamoto; Katsuyoshi Washio

doi:10.1016/S0040-6090(00)00869-5

Si_1-xGe_x selective epitaxial growth for ultra-high-speed self-aligned HBTs

Katsuya Oda, Eiji Ohue, Masamichi Tanabe, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Si_1-xGe_x low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H₂ pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si_1-xGe_x layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si_1-xGe_x low-temperature selective epitaxial growth.

Original language	English
Pages (from-to)	358-361
Number of pages	4
Journal	Thin Solid Films
Volume	369
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00869-5
Publication status	Published - 2000 Jul 3
Externally published	Yes
Event	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sep 12 → 1999 Sep 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs",

abstract = "Si1-xGex low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H2 pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si1-xGex layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si1-xGex low-temperature selective epitaxial growth.",

author = "Katsuya Oda and Eiji Ohue and Masamichi Tanabe and Hiromi Shimamoto and Katsuyoshi Washio",

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T1 - Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs

AU - Oda, Katsuya

AU - Ohue, Eiji

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

AU - Washio, Katsuyoshi

PY - 2000/7/3

Y1 - 2000/7/3

N2 - Si1-xGex low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H2 pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si1-xGex layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si1-xGex low-temperature selective epitaxial growth.

AB - Si1-xGex low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H2 pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si1-xGex layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si1-xGex low-temperature selective epitaxial growth.

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