Abstract
Si1-xGex low temperature selective epitaxial growth was investigated by using a UHV/CVD system with high pressure H2 pre-cleaning of the substrate and SiGe HBTs were fabricated. The selective epitaxial growth was achieved by using different incubation times for Si(100) substrate and mask layers. Device performances show the good crystallinity of selectively grown Si1-xGex layer: an extremely high current gain of 45 000 and a high cutoff frequency of 154 GHz were achieved in the HBT with a maximum Ge content of 25%. Furthermore, the comparison of AC performance between self-aligned and non-self-aligned transistors demonstrates the advantage of the self-aligned structure formed by the Si1-xGex low-temperature selective epitaxial growth.
Original language | English |
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Pages (from-to) | 358-361 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 369 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2000 Jul 3 |
Externally published | Yes |
Event | The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sep 12 → 1999 Sep 17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry