Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition

R. Schütz; J. Murota; T. Maeda; R. Kircher; K. Yokoo; S. Ono; H. L. Hartnagel

doi:10.1016/0040-6090(92)90034-9

Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition

R. Schütz, J. Murota, T. Maeda, R. Kircher, K. Yokoo, S. Ono, H. L. Hartnagel

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

Abstract

A new low temperature low pressure chemical deposition process for Si/SiGe/Si heterostructures containing high germanium mole fractions has been developed. The silicon surface and the SiSiGe interface roughness strongly depend on the deposition temperature and the germanium concentration. For germanium concentrations around 20%, flat surfaces can be realized at 550 °C. High concentrations of more than 50% Ge require much lower growth temperatures, namely 450 °C for SiGe and 525 °C for the silicon capping layer. A new optimized process sequence is given to grow Si/SiGe/Si heterostructures with atomically flat surfaces and interfaces containing more than 50% Ge.

Original language	English
Pages (from-to)	38-41
Number of pages	4
Journal	Thin Solid Films
Volume	222
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(92)90034-9
Publication status	Published - 1992 Dec 20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition. / Schütz, R.; Murota, J.; Maeda, T.; Kircher, R.; Yokoo, K.; Ono, S.; Hartnagel, H. L.

In: Thin Solid Films, Vol. 222, No. 1-2, 20.12.1992, p. 38-41.

Research output: Contribution to journal › Article › peer-review

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title = "Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition",

abstract = "A new low temperature low pressure chemical deposition process for Si/SiGe/Si heterostructures containing high germanium mole fractions has been developed. The silicon surface and the SiSiGe interface roughness strongly depend on the deposition temperature and the germanium concentration. For germanium concentrations around 20%, flat surfaces can be realized at 550 °C. High concentrations of more than 50% Ge require much lower growth temperatures, namely 450 °C for SiGe and 525 °C for the silicon capping layer. A new optimized process sequence is given to grow Si/SiGe/Si heterostructures with atomically flat surfaces and interfaces containing more than 50% Ge.",

author = "R. Sch{\"u}tz and J. Murota and T. Maeda and R. Kircher and K. Yokoo and S. Ono and Hartnagel, {H. L.}",

note = "Funding Information: This study was carried out in the Superclean Room in the Laboratory for Microelectronics, Research Institute for Electrical Communication, Tohoku University. The authors would like to thank the Japan Society for the Promotion of Science (JSPS) for the financial support of this work. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

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doi = "10.1016/0040-6090(92)90034-9",

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T1 - Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition

AU - Schütz, R.

AU - Murota, J.

AU - Maeda, T.

AU - Kircher, R.

AU - Yokoo, K.

AU - Ono, S.

AU - Hartnagel, H. L.

N1 - Funding Information: This study was carried out in the Superclean Room in the Laboratory for Microelectronics, Research Institute for Electrical Communication, Tohoku University. The authors would like to thank the Japan Society for the Promotion of Science (JSPS) for the financial support of this work. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992/12/20

Y1 - 1992/12/20

N2 - A new low temperature low pressure chemical deposition process for Si/SiGe/Si heterostructures containing high germanium mole fractions has been developed. The silicon surface and the SiSiGe interface roughness strongly depend on the deposition temperature and the germanium concentration. For germanium concentrations around 20%, flat surfaces can be realized at 550 °C. High concentrations of more than 50% Ge require much lower growth temperatures, namely 450 °C for SiGe and 525 °C for the silicon capping layer. A new optimized process sequence is given to grow Si/SiGe/Si heterostructures with atomically flat surfaces and interfaces containing more than 50% Ge.

AB - A new low temperature low pressure chemical deposition process for Si/SiGe/Si heterostructures containing high germanium mole fractions has been developed. The silicon surface and the SiSiGe interface roughness strongly depend on the deposition temperature and the germanium concentration. For germanium concentrations around 20%, flat surfaces can be realized at 550 °C. High concentrations of more than 50% Ge require much lower growth temperatures, namely 450 °C for SiGe and 525 °C for the silicon capping layer. A new optimized process sequence is given to grow Si/SiGe/Si heterostructures with atomically flat surfaces and interfaces containing more than 50% Ge.

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ER -

Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition

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