Si/Si 1-xGe x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit

K. Watanabe, R. Tsuchiya, K. Oda, J. Yamamoto, T. Hattori, M. Matsumura, M. Kudo, K. Torii

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We propose a novel Si/Si 1-xGe x nanopillar superlattice solar cell enabling quantum confinement, light trapping, increased lifetime, and efficient carrier extraction for the first time. An average reflectance as low as 3.2% was achieved by adopting a hybrid nanopillar array structure. Auger recombination lifetime was significantly increased from 4×10 -10 s to 2 × 10 -8 s by barrier height engineering of the Si/Si 1-xGe x superlattice. These two techniques are predicted to improve solar cell efficiency from 23% to 35%. Our results demonstrate the possibility of overcoming the theoretical (Shockley-Queisser) limit (30%) of conventional Si solar cell.

    Original languageEnglish
    Title of host publication2011 International Electron Devices Meeting, IEDM 2011
    Pages36.4.1-36.4.4
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    Duration: 2011 Dec 52011 Dec 7

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2011 IEEE International Electron Devices Meeting, IEDM 2011
    CountryUnited States
    CityWashington, DC
    Period11/12/511/12/7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Watanabe, K., Tsuchiya, R., Oda, K., Yamamoto, J., Hattori, T., Matsumura, M., Kudo, M., & Torii, K. (2011). Si/Si 1-xGe x nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 36.4.1-36.4.4). [6131685] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131685