SiOx formation process between YSZ and Si substrate in YSZ/Si thin films by in-situ TEM analysis

T. Kiguchi, N. Wakiya, K. Shinozaki, N. Mizutani

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Formation process of the amorphous SiOx layer between YSZ thin film and Si wafer is observed by TEM with in-situ heating system. The film has a very thin SiOx layer (1nm) before heating. The SiOx layer dose not grows up to about 600°C, and furthermore grows above 600°C. The SiOx thickness reaches the 3nm at 800°C. This result indicates that the formation of SiOx layer is brought about due to the diffusion of the oxygen from the YSZ layer into the Si wafer.

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalKey Engineering Materials
Volume216
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event20th Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan
Duration: 2000 Oct 262000 Oct 27

Keywords

  • Crystallization
  • Diffusion
  • In-situ observation
  • Oxidation
  • Si
  • SiOx
  • TEM
  • YSZ

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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