SiOx films prepared using RF magnetron sputtering with a SiO target

H. Miyazaki; T. Goto

doi:10.1016/j.jnoncrysol.2005.12.008

SiO_x films prepared using RF magnetron sputtering with a SiO target

H. Miyazaki, T. Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

In this study, SiO_x thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiO_x films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiO_x film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiO_x films from 3.7 to greater than 6 eV.

Original language	English
Pages (from-to)	329-333
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	4
DOIs	https://doi.org/10.1016/j.jnoncrysol.2005.12.008
Publication status	Published - 2006 Apr 1

Keywords

Absorption
Defects
Optical spectroscopy
STEM/TEM
Silica
Sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.jnoncrysol.2005.12.008

Cite this

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title = "SiOx films prepared using RF magnetron sputtering with a SiO target",

abstract = "In this study, SiOx thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiOx films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiOx film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiOx films from 3.7 to greater than 6 eV.",

keywords = "Absorption, Defects, Optical spectroscopy, STEM/TEM, Silica, Sputtering",

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T1 - SiOx films prepared using RF magnetron sputtering with a SiO target

AU - Miyazaki, H.

AU - Goto, T.

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N2 - In this study, SiOx thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiOx films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiOx film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiOx films from 3.7 to greater than 6 eV.

AB - In this study, SiOx thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiOx films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiOx film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiOx films from 3.7 to greater than 6 eV.

KW - Absorption

KW - Defects

KW - Optical spectroscopy

KW - STEM/TEM

KW - Silica

KW - Sputtering

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