SiOx films prepared using RF magnetron sputtering with a SiO target

H. Miyazaki, T. Goto

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

In this study, SiOx thin films were prepared using reactive radio frequency magnetron sputtering at room temperature with a SiO sintered target. The obtained SiOx films were identified using X-ray diffraction, transmission electron microscopy, infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ultraviolet-visible transmittance measurement. The x in SiOx film was controlled from 0.98 to 1.70 by changing the oxygen flow ratio at deposition. Increasing the oxygen flow ratio increased the optical gap of the SiOx films from 3.7 to greater than 6 eV.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume352
Issue number4
DOIs
Publication statusPublished - 2006 Apr 1

Keywords

  • Absorption
  • Defects
  • Optical spectroscopy
  • STEM/TEM
  • Silica
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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