SiO2/Si Interfaces Studied by Scanning Tunneling Microscopy and High Resolution Transmission Electron Microscopy

M. Niwa; M. Matsumoto; H. Iwasaki

doi:10.1149/1.2069322

SiO₂/Si Interfaces Studied by Scanning Tunneling Microscopy and High Resolution Transmission Electron Microscopy

M. Niwa, M. Matsumoto, H. Iwasaki

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Two types of SiO₂/Si(001) interfaces grown under wet and dry oxidation conditions have been studied by scanning tunneling microscopy (STM) and high resolution transmission electron microscopy (HRTEM). Hydrogen terminated Si surfaces were prepared for STM observations by stripping the oxide using aqueous HF acid. HRTEM was carried out using cross–sectional procedures. Fairly good agreement could be obtained between STM and HRTEM results for the “wet oxide” interface of metal oxide semiconductor structured samples. HRTEM results indicated that dry oxide interfaces showed somewhat larger values of roughness. Also, HRTEM of stripped oxide interfaces was also successfully carried out. On the whole, as for the dry oxide interface, it was more difficult to obtain a reproducible STM image than for the wet oxide interface, but the reverse was true for HRTEM owing to electron irradiation damage of the oxide itself.

Original language	English
Pages (from-to)	901-906
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	139
Issue number	3
DOIs	https://doi.org/10.1149/1.2069322
Publication status	Published - 1992 Mar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "Two types of SiO2/Si(001) interfaces grown under wet and dry oxidation conditions have been studied by scanning tunneling microscopy (STM) and high resolution transmission electron microscopy (HRTEM). Hydrogen terminated Si surfaces were prepared for STM observations by stripping the oxide using aqueous HF acid. HRTEM was carried out using cross–sectional procedures. Fairly good agreement could be obtained between STM and HRTEM results for the “wet oxide” interface of metal oxide semiconductor structured samples. HRTEM results indicated that dry oxide interfaces showed somewhat larger values of roughness. Also, HRTEM of stripped oxide interfaces was also successfully carried out. On the whole, as for the dry oxide interface, it was more difficult to obtain a reproducible STM image than for the wet oxide interface, but the reverse was true for HRTEM owing to electron irradiation damage of the oxide itself.",

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AU - Niwa, M.

AU - Matsumoto, M.

AU - Iwasaki, H.

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