TY - JOUR
T1 - SiO2/grooved Al electrode/LiTaO3 and edge-reflection surface acoustic wave structures having large reflection coefficient, large coupling factor, and excellent temperature characteristic even if Al electrodes are used
AU - Kadota, Michio
AU - Kimura, Tetsuya
PY - 2006/5/25
Y1 - 2006/5/25
N2 - A surface acoustic wave (SAW) substrate for a duplexer, such as a Personal Communication Service handy phone system in the U.S.A., is required to have a good temperature stability, an optimum electromechanical coupling factor, and a large reflection coefficient. The conventional method of depositing a SiO 2 film on a thick Al electrode/LiTaO3 substrate to improve its temperature coefficient of frequency (TCF) is not effective for SAW resonator-type devices, because good frequency characteristics are not obtained due to large convex portions on the surface of SiO2 film. However, resonators having a large reflection coefficient, an excellent TCF, and good frequency characteristics were realized using the following two new structures: (I) SiO2 film/grooved Al electrode/LiTaO3 structure and (II) reflection of a shear horizontal (SH) wave at free edges on a SiO 2 film/thin Al electrode/LiTaO3 structure substrate.
AB - A surface acoustic wave (SAW) substrate for a duplexer, such as a Personal Communication Service handy phone system in the U.S.A., is required to have a good temperature stability, an optimum electromechanical coupling factor, and a large reflection coefficient. The conventional method of depositing a SiO 2 film on a thick Al electrode/LiTaO3 substrate to improve its temperature coefficient of frequency (TCF) is not effective for SAW resonator-type devices, because good frequency characteristics are not obtained due to large convex portions on the surface of SiO2 film. However, resonators having a large reflection coefficient, an excellent TCF, and good frequency characteristics were realized using the following two new structures: (I) SiO2 film/grooved Al electrode/LiTaO3 structure and (II) reflection of a shear horizontal (SH) wave at free edges on a SiO 2 film/thin Al electrode/LiTaO3 structure substrate.
KW - Edge reflection
KW - Excellent TCF
KW - Grooved AI electrode
KW - Resonator
KW - SiO
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U2 - 10.1143/JJAP.45.4647
DO - 10.1143/JJAP.45.4647
M3 - Article
AN - SCOPUS:33744481025
VL - 45
SP - 4647
EP - 4650
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -