Abstract
Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.
Original language | English |
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Pages (from-to) | 4763-4768 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 8 |
Publication status | Published - 2001 Aug 1 |
Keywords
- Interface
- Oxidation
- Silicon
- Silicon dioxide
- Step
- Surface
- Terrace
- Topography
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)