Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2001 Aug 1|
- Silicon dioxide
ASJC Scopus subject areas
- Physics and Astronomy(all)