SiO2 surface and SiO2/Si interface topography change by thermal oxidation

N. Tokuda; M. Murata; D. Hojo; K. Yamabe

SiO₂ surface and SiO₂/Si interface topography change by thermal oxidation

N. Tokuda, M. Murata, D. Hojo, K. Yamabe

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Using a wide atomically flat (111) Si surface, the topography change of SiO₂ surface and SiO₂/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO₂ surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO₂/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO₂/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.

Original language	English
Pages (from-to)	4763-4768
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	8
Publication status	Published - 2001 Aug 1

Keywords

Interface
Oxidation
Silicon
Silicon dioxide
Step
Surface
Terrace
Topography

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "SiO2 surface and SiO2/Si interface topography change by thermal oxidation",

abstract = "Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.",

keywords = "Interface, Oxidation, Silicon, Silicon dioxide, Step, Surface, Terrace, Topography",

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T1 - SiO2 surface and SiO2/Si interface topography change by thermal oxidation

AU - Tokuda, N.

AU - Murata, M.

AU - Hojo, D.

AU - Yamabe, K.

PY - 2001/8/1

Y1 - 2001/8/1

N2 - Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.

AB - Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.

KW - Interface

KW - Oxidation

KW - Silicon

KW - Silicon dioxide

KW - Step

KW - Surface

KW - Terrace

KW - Topography

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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