SiO2 surface and SiO2/Si interface topography change by thermal oxidation

N. Tokuda, M. Murata, D. Hojo, K. Yamabe

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Using a wide atomically flat (111) Si surface, the topography change of SiO2 surface and SiO2/Si interface by thermal oxidation was investigated for various oxidation temperatures. The initial step/terrace configuration was preserved on the SiO2 surface irrespective of oxidation temperature. On the other hand, the general step/terrace configuration of the initial Si surface was succeeded by the SiO2/Si interface at temperatures lower than 950°C, while at temperatures higher than 1050°C, the configuration was destroyed at the SiO2/Si interface with increasing oxide thickness until the steps finally disappeared. Terrace surfaces, however, were steeply microscopically roughened in the initial oxidation range irrespective of the oxidation temperature.

Original languageEnglish
Pages (from-to)4763-4768
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8
Publication statusPublished - 2001 Aug
Externally publishedYes


  • Interface
  • Oxidation
  • Silicon
  • Silicon dioxide
  • Step
  • Surface
  • Terrace
  • Topography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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