SiO 2 valence band near the SiO 2 /Si(111) interface

Hiroshi Nohira, Takeo Hattori

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The changes in X-ray excited valence bands of silicon oxide with progress of oxidation of a Si(111) surface in 1 Torr dry oxygen at 600-800°C were studied at initial stage of oxidation. The following results were obtained: (1) the energy level of the top of the valence band within 0.9 nm from the interface is different from that of the bulk silicon oxide by about 0.2 eV and (2) the valence band discontinuity at the interface changes periodically with the interface structures.

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • SiO /Si interface
  • Silicon dioxide
  • Valence band discontinuity
  • Valence band formation
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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