SiO 2 valence band near the SiO 2 /Si(111) interface

Hiroshi Nohira, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    25 Citations (Scopus)

    Abstract

    The changes in X-ray excited valence bands of silicon oxide with progress of oxidation of a Si(111) surface in 1 Torr dry oxygen at 600-800°C were studied at initial stage of oxidation. The following results were obtained: (1) the energy level of the top of the valence band within 0.9 nm from the interface is different from that of the bulk silicon oxide by about 0.2 eV and (2) the valence band discontinuity at the interface changes periodically with the interface structures.

    Original languageEnglish
    Pages (from-to)119-122
    Number of pages4
    JournalApplied Surface Science
    Volume117-118
    DOIs
    Publication statusPublished - 1997 Jun 2

    Keywords

    • SiO /Si interface
    • Silicon dioxide
    • Valence band discontinuity
    • Valence band formation
    • XPS

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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