SiO2/Si interfaces studied by STM

Masaaki Niwa, Hiroshi Iwasaki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Topologies of SiO2/Si(100) interfaces grown by several oxidation conditions were successfully observed using a scanning tunneling microscope (STM) in air with a wider area than ever reported. Hydrogen terminated Si surfaces were prepared by means of HF dipping and were checked by XPS and AES. The interfaces showed ripplelike corrugations that consisted of steps caused by the misorientation of the silicon single crystal. The large step height was produced by wet oxidation. Morphologies of the interfaces measured by STM were consistent with the observation by TEM.

Original languageEnglish
Pages (from-to)L2320-L2323
JournalJapanese journal of applied physics
Volume28
Issue number12 A
DOIs
Publication statusPublished - 1989 Dec
Externally publishedYes

Keywords

  • AES
  • HF-dipped
  • Hydrogen termination
  • Rippled morphology
  • STM, XPS, AES, TEM, HF-dipped surface, hydrogen termination, rippled morphology
  • Surface
  • TEM
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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