SiO 2 etching characteristics using UHF plasma source

Hiroshi Nogami; Etsuo Wani; Yukito Nakagawa; Kimiko Mashimo; Seiji Samukawa; Tsutomu Tsukada

SiO ₂ etching characteristics using UHF plasma source

Hiroshi Nogami, Etsuo Wani, Yukito Nakagawa, Kimiko Mashimo, Seiji Samukawa, Tsutomu Tsukada

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO ₂ etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF ₂ radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO ₂ etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO ₂ to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

Original language	English
Pages (from-to)	150-156
Number of pages	7
Journal	NEC Research and Development
Volume	38
Issue number	2
Publication status	Published - 1997 Dec 1
Externally published	Yes

Keywords

Etched profile
Ion saturation current density
Optical emission spectrum
Pressure dependence
RIE lag
SiO etching
UHF (Ultra-High-Frequency) plasma source

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Cite this

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title = "SiO 2 etching characteristics using UHF plasma source",

abstract = "The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.",

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T1 - SiO 2 etching characteristics using UHF plasma source

AU - Nogami, Hiroshi

AU - Wani, Etsuo

AU - Nakagawa, Yukito

AU - Mashimo, Kimiko

AU - Samukawa, Seiji

AU - Tsukada, Tsutomu

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

AB - The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

KW - Etched profile

KW - Ion saturation current density

KW - Optical emission spectrum

KW - Pressure dependence

KW - RIE lag

KW - SiO etching

KW - UHF (Ultra-High-Frequency) plasma source

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