SiO 2 etching characteristics using UHF plasma source

Hiroshi Nogami, Etsuo Wani, Yukito Nakagawa, Kimiko Mashimo, Seiji Samukawa, Tsutomu Tsukada

Research output: Contribution to journalArticle

Abstract

The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

Original languageEnglish
Pages (from-to)150-156
Number of pages7
JournalNEC Research and Development
Volume38
Issue number2
Publication statusPublished - 1997 Dec 1
Externally publishedYes

Keywords

  • Etched profile
  • Ion saturation current density
  • Optical emission spectrum
  • Pressure dependence
  • RIE lag
  • SiO etching
  • UHF (Ultra-High-Frequency) plasma source

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Nogami, H., Wani, E., Nakagawa, Y., Mashimo, K., Samukawa, S., & Tsukada, T. (1997). SiO 2 etching characteristics using UHF plasma source. NEC Research and Development, 38(2), 150-156.