SiO 2 etching characteristics using UHF plasma source

Hiroshi Nogami; Etsuo Wani; Yukito Nakagawa; Kimiko Mashimo; Seiji Samukawa; Tsutomu Tsukada

SiO 2 etching characteristics using UHF plasma source

Hiroshi Nogami, Etsuo Wani, Yukito Nakagawa, Kimiko Mashimo, Seiji Samukawa, Tsutomu Tsukada

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO ₂ etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF ₂ radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO ₂ etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO ₂ to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

Original language	English
Title of host publication	NEC Research & Development
Pages	150-157
Number of pages	8
Volume	38
Edition	2
Publication status	Published - 1997 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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title = "SiO 2 etching characteristics using UHF plasma source",

abstract = "The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.",

author = "Hiroshi Nogami and Etsuo Wani and Yukito Nakagawa and Kimiko Mashimo and Seiji Samukawa and Tsutomu Tsukada",

year = "1997",

month = apr,

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language = "English",

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booktitle = "NEC Research & Development",

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TY - CHAP

T1 - SiO 2 etching characteristics using UHF plasma source

AU - Nogami, Hiroshi

AU - Wani, Etsuo

AU - Nakagawa, Yukito

AU - Mashimo, Kimiko

AU - Samukawa, Seiji

AU - Tsukada, Tsutomu

PY - 1997/4/1

Y1 - 1997/4/1

N2 - The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

AB - The characteristics of the UHF (Ultra-High-Frequency) plasma and SiO 2 etching with this plasma source were investigated. A study on the optical emission spectroscopy shows that the plasma abounded in CF 2 radicals, which indicates that the degree of the dissociation of feed gas is low. The ion saturation current density shows low dependence on pressure. The etching characteristics, such as SiO 2 etch rate and RIE lag, also show low dependence on pressure. There is no significant effect of pressure on etched profile for a given ion saturation current density, a self-bias voltage and a selectivity of SiO 2 to Photoresist (PR). These characteristics demonstrate that the UHF plasma source can be expected to provide a wide process window for pressure.

UR - http://www.scopus.com/inward/record.url?scp=0031121610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031121610&partnerID=8YFLogxK

M3 - Chapter

VL - 38

SP - 150

EP - 157

BT - NEC Research & Development

ER -

SiO 2 etching characteristics using UHF plasma source

Abstract

ASJC Scopus subject areas

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