We investigated the dynamics of oxidation processes with stress relaxation in the Si/SiO2 interface by using variable charge molecular dynamics methods. An SiO molecule is emitted from the Si/SiO2 interface into the SiO2 region in order to release the accumulated stress in the interface. The emitted SiO molecule having Si dangling bonds moves into the SiO2 network. The SiO molecule is completely incorporated into the SiO2 network after an oxygen atom (oxygen vacancy) diffuses to be bonded with these Si dangling bonds.
|Title of host publication||Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6|
|Subtitle of host publication||New Materials, Processes, and Equipment|
|Publisher||Electrochemical Society Inc.|
|Number of pages||8|
|Publication status||Published - 2010|
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