SiO emission and incorporation in silicon oxidation process using molecular dynamics method

Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We investigated the dynamics of oxidation processes with stress relaxation in the Si/SiO2 interface by using variable charge molecular dynamics methods. An SiO molecule is emitted from the Si/SiO2 interface into the SiO2 region in order to release the accumulated stress in the interface. The emitted SiO molecule having Si dangling bonds moves into the SiO2 network. The SiO molecule is completely incorporated into the SiO2 network after an oxygen atom (oxygen vacancy) diffuses to be bonded with these Si dangling bonds.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages361-368
Number of pages8
Edition1
DOIs
Publication statusPublished - 2010 Dec 30
Externally publishedYes
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 27

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/27

ASJC Scopus subject areas

  • Engineering(all)

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