SiNx deposition at low temperature using uv-irradiated nh3

Y. Shiba, A. Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 8
EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, V. Chakrapani
PublisherElectrochemical Society Inc.
Pages31-36
Number of pages6
Edition4
ISBN (Electronic)9781607688662, 9781607688686, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs
Publication statusPublished - 2019 Jan 1
EventSymposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting - Dallas, United States
Duration: 2019 May 262019 May 30

Publication series

NameECS Transactions
Number4
Volume89
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting
CountryUnited States
CityDallas
Period19/5/2619/5/30

ASJC Scopus subject areas

  • Engineering(all)

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