SiNx deposition at low temperature using uv-irradiated nh3

Y. Shiba; Akinobu Teramoto; T. Suwa; K. Ishii; A. Shimizu; K. Umezawa; R. Kuroda; S. Sugawa

doi:10.1149/08904.0031ecst

SiN_x deposition at low temperature using uv-irradiated nh₃

Y. Shiba, Akinobu Teramoto, T. Suwa, K. Ishii, A. Shimizu, K. Umezawa, R. Kuroda, S. Sugawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.

Original language	English
Title of host publication	Processes at the Semiconductor Solution Interface 8
Editors	C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, V. Chakrapani
Publisher	Electrochemical Society Inc.
Pages	31-36
Number of pages	6
Edition	4
ISBN (Electronic)	9781607688662, 9781607688686, 9781607688693, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs	https://doi.org/10.1149/08904.0031ecst
Publication status	Published - 2019
Event	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting - Dallas, United States Duration: 2019 May 26 → 2019 May 30

Publication series

Name	ECS Transactions
Number	4
Volume	89
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting
Country/Territory	United States
City	Dallas
Period	19/5/26 → 19/5/30

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08904.0031ecst

Cite this

Shiba, Y., Teramoto, A., Suwa, T., Ishii, K., Shimizu, A., Umezawa, K., Kuroda, R., & Sugawa, S. (2019). SiN_x deposition at low temperature using uv-irradiated nh₃. In C. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. Lynch, P. M. Vereecken, H. Wang, & V. Chakrapani (Eds.), Processes at the Semiconductor Solution Interface 8 (4 ed., pp. 31-36). (ECS Transactions; Vol. 89, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/08904.0031ecst

SiN_x deposition at low temperature using uv-irradiated nh₃. / Shiba, Y.; Teramoto, Akinobu; Suwa, T. et al.

Processes at the Semiconductor Solution Interface 8. ed. / C. O'Dwyer; D. N. Buckley; A. Etcheberry; A. C. Hillier; R. Lynch; P. M. Vereecken; H. Wang; V. Chakrapani. 4. ed. Electrochemical Society Inc., 2019. p. 31-36 (ECS Transactions; Vol. 89, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiba, Y, Teramoto, A, Suwa, T, Ishii, K, Shimizu, A, Umezawa, K, Kuroda, R & Sugawa, S 2019, SiN_x deposition at low temperature using uv-irradiated nh₃. in C O'Dwyer, DN Buckley, A Etcheberry, AC Hillier, R Lynch, PM Vereecken, H Wang & V Chakrapani (eds), Processes at the Semiconductor Solution Interface 8. 4 edn, ECS Transactions, no. 4, vol. 89, Electrochemical Society Inc., pp. 31-36, Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting, Dallas, United States, 19/5/26. https://doi.org/10.1149/08904.0031ecst

Shiba Y, Teramoto A, Suwa T, Ishii K, Shimizu A, Umezawa K et al. SiN_x deposition at low temperature using uv-irradiated nh₃. In O'Dwyer C, Buckley DN, Etcheberry A, Hillier AC, Lynch R, Vereecken PM, Wang H, Chakrapani V, editors, Processes at the Semiconductor Solution Interface 8. 4 ed. Electrochemical Society Inc. 2019. p. 31-36. (ECS Transactions; 4). doi: 10.1149/08904.0031ecst

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abstract = "We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.",

author = "Y. Shiba and Akinobu Teramoto and T. Suwa and K. Ishii and A. Shimizu and K. Umezawa and R. Kuroda and S. Sugawa",

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AU - Teramoto, Akinobu

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AU - Shimizu, A.

AU - Umezawa, K.

AU - Kuroda, R.

AU - Sugawa, S.

N1 - Funding Information: This work was supported by Tokyo Electron Technology Solutions Limited. This research was carried out at the Fluctuation Free Facility of the New Industry Creation Hatchery Center, Tohoku University. Publisher Copyright: © 2019 Electrochemical Society Inc.. All rights reserved.

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N2 - We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.

AB - We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.

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