@inproceedings{4e36fe0fc76549ef8db4c9df23e6fcf9,
title = "SiNx deposition at low temperature using uv-irradiated nh3",
abstract = "We developed a low-temperature silicon nitride (SiNx) film deposition technique using ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas. In this work, to determine the effect of UV-irradiated NH3, we deposited SiNx films using the developed chemical vapor deposition technique and then evaluated their characteristics. The energy of UV light was only used to excite NH3. Disilane (Si2H6) without UV irradiation was used as the precursor gas. The results demonstrated that using UV-irradiated NH3 as the reactant gas enabled deposition of SiNx films at 30 and 450°C. The N/Si ratio of the SiNx film deposited at 450°C was close to 1.33.",
author = "Y. Shiba and Akinobu Teramoto and T. Suwa and K. Ishii and A. Shimizu and K. Umezawa and R. Kuroda and S. Sugawa",
note = "Funding Information: This work was supported by Tokyo Electron Technology Solutions Limited. This research was carried out at the Fluctuation Free Facility of the New Industry Creation Hatchery Center, Tohoku University. Publisher Copyright: {\textcopyright} 2019 Electrochemical Society Inc.. All rights reserved.; Symposium on Processes at the Semiconductor Solution Interface 8 - 235th ECS Meeting ; Conference date: 26-05-2019 Through 30-05-2019",
year = "2019",
doi = "10.1149/08904.0031ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "31--36",
editor = "C. O'Dwyer and Buckley, {D. N.} and A. Etcheberry and Hillier, {A. C.} and R. Lynch and Vereecken, {P. M.} and H. Wang and V. Chakrapani",
booktitle = "Processes at the Semiconductor Solution Interface 8",
edition = "4",
}