Single vacancies in slowly cooled silicon crystals

Masashi Suezawa; Ichiro Yonenaga

doi:10.1016/j.physb.2007.08.127

Single vacancies in slowly cooled silicon crystals

Masashi Suezawa, Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

To estimate the concentration of single vacancies in slowly cooled Si crystals, we calculated the diffusion length and pair formation of vacancies during cooling. The results showed that the concentration of quenched-in single vacancies at room temperature was much lower than that at high temperature.

Original language	English
Pages (from-to)	123-125
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.08.127
Publication status	Published - 2007 Dec 15

Keywords

Diffusion
Divacancy
Si
Single vacancy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Single vacancies in slowly cooled silicon crystals",

abstract = "To estimate the concentration of single vacancies in slowly cooled Si crystals, we calculated the diffusion length and pair formation of vacancies during cooling. The results showed that the concentration of quenched-in single vacancies at room temperature was much lower than that at high temperature.",

keywords = "Diffusion, Divacancy, Si, Single vacancy",

author = "Masashi Suezawa and Ichiro Yonenaga",

year = "2007",

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AB - To estimate the concentration of single vacancies in slowly cooled Si crystals, we calculated the diffusion length and pair formation of vacancies during cooling. The results showed that the concentration of quenched-in single vacancies at room temperature was much lower than that at high temperature.

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KW - Si

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