Single vacancies in slowly cooled silicon crystals

Masashi Suezawa, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review


To estimate the concentration of single vacancies in slowly cooled Si crystals, we calculated the diffusion length and pair formation of vacancies during cooling. The results showed that the concentration of quenched-in single vacancies at room temperature was much lower than that at high temperature.

Original languageEnglish
Pages (from-to)123-125
Number of pages3
JournalPhysica B: Condensed Matter
Publication statusPublished - 2007 Dec 15


  • Diffusion
  • Divacancy
  • Si
  • Single vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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