Abstract
We have applied supercritical CO2 drying technique to fabricate free-standing semiconductor nanotubes, in order to solve the problem of tube collapsing caused by the capillary forces in the final drying process. We have successfully fabricated damage-free single-turn nanotubes with ultra-thin walls (lesser than 3 nm) and very high tube-length/wall-thickness ratios (higher than 103), which so far could not been realized. These extremely small and light structures with unique geometry are promising for future nanoelectromechanical systems.
Original language | English |
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Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 7 A |
Publication status | Published - 2003 Jul 1 |
Externally published | Yes |
Keywords
- GaAs/InAs nanotubes
- Supercritical CO drying
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)