Single-turn GaAs/InAs nanotubes fabricated using the supercritical CO 2 drying technique

Vladimir Seleznev, Hiroshi Yamaguchi, Yoshiro Hirayama, Victor Prinz

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

We have applied supercritical CO2 drying technique to fabricate free-standing semiconductor nanotubes, in order to solve the problem of tube collapsing caused by the capillary forces in the final drying process. We have successfully fabricated damage-free single-turn nanotubes with ultra-thin walls (lesser than 3 nm) and very high tube-length/wall-thickness ratios (higher than 103), which so far could not been realized. These extremely small and light structures with unique geometry are promising for future nanoelectromechanical systems.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number7 A
Publication statusPublished - 2003 Jul 1
Externally publishedYes

Keywords

  • GaAs/InAs nanotubes
  • Supercritical CO drying

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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