@article{2f1edfb80291423fa596ebacbe5ebc39,
title = "Single-Shot Single-Gate rf Spin Readout in Silicon",
abstract = "For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits. However, state-of-the-art topological error correction codes benefit from the ability to resolve the qubit state within a single shot, that is, without repeated measurements. Here, we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of 82.9% at 3.3 kHz measurement bandwidth. We use this technique to measure a triplet T- to singlet S0 relaxation time of 0.62 ms in precision donor quantum dots in silicon. We also show that the use of rf readout does not impact the spin lifetimes (S0 to T- decay remained approximately 2 ms at zero detuning). This establishes single-gate sensing as a viable readout method for spin qubits.",
author = "P. Pakkiam and Timofeev, {A. V.} and House, {M. G.} and Hogg, {M. R.} and T. Kobayashi and M. Koch and S. Rogge and Simmons, {M. Y.}",
note = "Funding Information: This research is supported by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Project No. CE110001027) and the U.S. Army Research Office under Contract No. W911NF-17-1-0202. The device was fabricated in part at the New South Wales node of the Australian National Fabrication Facility. We also thank Lucas Orona for useful discussions. Publisher Copyright: {\textcopyright} 2018 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the »https://creativecommons.org/licenses/by/4.0/» Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "2018",
month = nov,
day = "26",
doi = "10.1103/PhysRevX.8.041032",
language = "English",
volume = "8",
journal = "Physical Review X",
issn = "2160-3308",
publisher = "American Physical Society",
number = "4",
}