Single photon generation from nitrogen atomic-layer doped gallium arsenide

Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have studied the properties of photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in nitrogen atomic-layer doped (ALD) GaAs. Micro-PL measurements were performed to investigate the properties of single photons generated from individual isoelectronic traps. Twin PL peaks were observed from individual isoelectronic traps in nitrogen ALD GaAs(001). The PL transitions at longer and shorter wavelength sides were linearly polarized in the [110] and [1-10] directions, respectively. The peak splitting and polarization properties can be explained by some in-plane anisotropy most likely due to strain in host crystal. From individual isoelectronic traps in nitrogen ALD GaAs(111), a single PL peak with random polarization was observed, showing that the growth on (111) surface is an effective way to obtain unpolarized single photons. As for nitrogen ALD GaAs(110), different polarization properties were obtained depending on the atomic configuration of NN pairs. In addition, we have used AlGaAs layers to diminish the in-plane anisotropy and could successfully obtained single emission lines with unpolarized character. Introducing AlGaAs layers was also useful for improving the luminescence efficiency.

Original languageEnglish
Title of host publicationTHERMEC 2011
PublisherTrans Tech Publications Ltd
Pages2916-2921
Number of pages6
ISBN (Print)9783037853030
DOIs
Publication statusPublished - 2012
Event7th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC'2011 - Quebec City, QC, Canada
Duration: 2011 Aug 12011 Aug 5

Publication series

NameMaterials Science Forum
Volume706-709
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other7th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC'2011
CountryCanada
CityQuebec City, QC
Period11/8/111/8/5

Keywords

  • Atomic layer doping
  • GaAs
  • Isoelectronic trap
  • MOVPE
  • Nitrogen
  • Photoluminescence
  • Single photon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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