Single-mode terahertz emission from current-injection graphene-channel transistor under population inversion

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Junki Mitsushio, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers [1,2]. In the graphene structures with p-i-n junctions, the injected electrons and holes have relatively low energies compared with those in optical pumping, so that the effect of carrier cooling can be rather pronounced, providing a significant advantage of the injection pumping in realization of graphene THz lasers [3,4]. We implement a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) and experimentally observe a single mode emission at 5.2 THz at 100K. The device exhibits a nonlinear threshold-like behavior.

Original languageEnglish
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
Publication statusPublished - 2016 Aug 22
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: 2016 Jun 192016 Jun 22

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period16/6/1916/6/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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